Modulation of sulfur partial pressure in sulfurization to significantly improve the photoelectrochemical performance over the Cu2ZnSnS4 photocathode.
نویسندگان
چکیده
Cu2ZnSnS4 photocathodes with excellent photoelectrochemical properties were fabricated via a facile method of adjusting the sulfur partial pressure in a semi-closed system, which achieved a maximum photocurrent-density of 1.8 mA cm(-2) under irradiation of a solar simulator which is 9-fold larger than that synthesized in an open system.
منابع مشابه
Effect of Growth Parameters and Annealing Atmosphere on the Properties of Cu2ZnSnS4 Thin Films Deposited by Cosputtering
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عنوان ژورنال:
- Chemical communications
دوره 51 74 شماره
صفحات -
تاریخ انتشار 2015